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Low temperature 2D GaN growth on Si(111) 7 × 7 assisted by hyperthermal nitrogen ions

As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits imposed by quantum mechanics. Thus, two-dimensional (2D) structures appear to be one of the best solutions to meet the ultimate challenges of modern optoelectronic and spintro...

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Detalles Bibliográficos
Autores principales:	Maniš, Jaroslav, Mach, Jindřich, Bartošík, Miroslav, Šamořil, Tomáš, Horák, Michal, Čalkovský, Vojtěch, Nezval, David, Kachtik, Lukáš, Konečný, Martin, Šikola, Tomáš
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	RSC 2022
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9400513/ https://www.ncbi.nlm.nih.gov/pubmed/36134341 http://dx.doi.org/10.1039/d2na00175f

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