Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction

A vertical GaN power MOSFET featuring an integrated fin-shaped non-junction diode (FDMOS) is proposed to improve reverse conduction and switching characteristics. Its static and dynamic characteristics are studied and analyzed by Sentaurus TCAD simulation. Compared with the conventional MOSFET (Con....

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Detalles Bibliográficos
Autores principales: Sun, Tao, Luo, Xiaorong, Wei, Jie, Yang, Kemeng, Deng, Siyu, Zhao, Zhijia, Jia, Yanjiang, Zhang, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9402820/
https://www.ncbi.nlm.nih.gov/pubmed/36001155
http://dx.doi.org/10.1186/s11671-022-03717-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9402820/
https://www.ncbi.nlm.nih.gov/pubmed/36001155
http://dx.doi.org/10.1186/s11671-022-03717-0

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