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Fabrication of epitaxial nanostructured ferroelectrics and investigation of their domain structures

Nanostructured ferroelectrics are important objects for studies on ferroelectric size effects as well as for applications to memory devices with ultra-high memory density. In the present article, we introduce several approaches for the synthesis of confined ferroelectrics with sizes in and below the...

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Detalles Bibliográficos
Autores principales: Han, H., Lee, K., Lee, W., Alexe, M., Hesse, D., Baik, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2009
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9403623/
https://www.ncbi.nlm.nih.gov/pubmed/36039190
http://dx.doi.org/10.1007/s10853-009-3528-2
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author Han, H.
Lee, K.
Lee, W.
Alexe, M.
Hesse, D.
Baik, S.
author_facet Han, H.
Lee, K.
Lee, W.
Alexe, M.
Hesse, D.
Baik, S.
author_sort Han, H.
collection PubMed
description Nanostructured ferroelectrics are important objects for studies on ferroelectric size effects as well as for applications to memory devices with ultra-high memory density. In the present article, we introduce several approaches for the synthesis of confined ferroelectrics with sizes in and below the hundreds of nanometer range, including top-down processes like e-beam lithography, self-assembly methods like chemical solution deposition, and growth by pulsed laser deposition using stencil masks. Furthermore, the ferroelectric domain structure of part of these nanostructures is investigated by means of synchrotron X-ray diffraction, and its contribution to the ferroelectric properties is discussed.
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spelling pubmed-94036232022-08-25 Fabrication of epitaxial nanostructured ferroelectrics and investigation of their domain structures Han, H. Lee, K. Lee, W. Alexe, M. Hesse, D. Baik, S. J Mater Sci Ferroelectrics Nanostructured ferroelectrics are important objects for studies on ferroelectric size effects as well as for applications to memory devices with ultra-high memory density. In the present article, we introduce several approaches for the synthesis of confined ferroelectrics with sizes in and below the hundreds of nanometer range, including top-down processes like e-beam lithography, self-assembly methods like chemical solution deposition, and growth by pulsed laser deposition using stencil masks. Furthermore, the ferroelectric domain structure of part of these nanostructures is investigated by means of synchrotron X-ray diffraction, and its contribution to the ferroelectric properties is discussed. Springer US 2009-10-01 2009 /pmc/articles/PMC9403623/ /pubmed/36039190 http://dx.doi.org/10.1007/s10853-009-3528-2 Text en © The Author(s) 2009 https://creativecommons.org/licenses/by-nc/2.0/Open AccessThis is an open access article distributed under the terms of the Creative Commons Attribution Noncommercial License (https://creativecommons.org/licenses/by-nc/2.0 (https://creativecommons.org/licenses/by-nc/2.0/) ), which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
spellingShingle Ferroelectrics
Han, H.
Lee, K.
Lee, W.
Alexe, M.
Hesse, D.
Baik, S.
Fabrication of epitaxial nanostructured ferroelectrics and investigation of their domain structures
title Fabrication of epitaxial nanostructured ferroelectrics and investigation of their domain structures
title_full Fabrication of epitaxial nanostructured ferroelectrics and investigation of their domain structures
title_fullStr Fabrication of epitaxial nanostructured ferroelectrics and investigation of their domain structures
title_full_unstemmed Fabrication of epitaxial nanostructured ferroelectrics and investigation of their domain structures
title_short Fabrication of epitaxial nanostructured ferroelectrics and investigation of their domain structures
title_sort fabrication of epitaxial nanostructured ferroelectrics and investigation of their domain structures
topic Ferroelectrics
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9403623/
https://www.ncbi.nlm.nih.gov/pubmed/36039190
http://dx.doi.org/10.1007/s10853-009-3528-2
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