Molecular Glass Resists Based on Tetraphenylsilane Derivatives: Effect of Protecting Ratios on Advanced Lithography

[Image: see text] A series of t-butyloxycarbonyl (t-Boc) protected tetraphenylsilane derivatives (TPSi-Boc(x), x = 60, 70, 85, 100%) were synthesized and used as resist materials to investigate the effect of t-Boc protecting ratio on advanced lithography. The physical properties such as solubility, film-forming ability, and thermal stability of TPSi-Boc(x) were examined to assess the suitability for application as candidates for positive-tone molecular glass resist materials. The effects of t-Boc protecting ratio had been studied in detail by electron beam lithography. The results suggest that the TPSi-Boc(x) resist with different t-Boc protecting ratios exhibit a significant change in contrast, pattern blur, and the density of bridge defect. The TPSi-Boc(70%) resist achieves the most excellent patterning capability. The extreme ultraviolet (EUV) lithography performance on TPSi-Boc(70%) was evaluated by using the soft X-ray interference lithography. The results demonstrate that the TPSi-Boc(70%) resist can achieve excellent patterning capability down to 20 nm isolated lines at 8.7 mJ/cm(2) and 25 nm dense lines at 14.5 mJ/cm(2). This study will help us to understand the relationship between the t-Boc protecting ratio and the patterning ability and supply useful guidelines for designing molecular resists.