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Numerical Analysis of a CZTS Solar Cell with MoS(2) as a Buffer Layer and Graphene as a Transparent Conducting Oxide Layer for Enhanced Cell Performance

Copper zinc tin sulfide (CZTS) can be considered an important absorber layer material for utilization in thin film solar cell devices because of its non-toxic, earth abundance, and cost-effective properties. In this study, the effect of molybdenum disulfide (MoS(2)) as a buffer layer on the differen...

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Detalles Bibliográficos
Autores principales: Ghosh, Sampad, Yasmin, Samira, Ferdous, Jannatul, Saha, Bidyut Baran
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9414464/
https://www.ncbi.nlm.nih.gov/pubmed/36014170
http://dx.doi.org/10.3390/mi13081249
Descripción
Sumario:Copper zinc tin sulfide (CZTS) can be considered an important absorber layer material for utilization in thin film solar cell devices because of its non-toxic, earth abundance, and cost-effective properties. In this study, the effect of molybdenum disulfide (MoS(2)) as a buffer layer on the different parameters of CZTS-based solar cell devices was explored to design a highly efficient solar cell. While graphene is considered a transparent conducting oxide (TCO) layer for the superior quantum efficiency of CZTS thin film solar cells, MoS(2) acts as a hole transport layer to offer electron–hole pair separation and an electron blocking layer to prevent recombination at the graphene/CZTS interface. This study proposed and analyzed a competent and economic CZTS solar cell structure (graphene/MoS(2)/CZTS/Ni) with MoS(2) and graphene as the buffer and TCO layers, respectively, using the Solar Cell Capacitance Simulator (SCAPS)-1D. The proposed structure exhibited the following enhanced solar cell performance parameters: open-circuit voltage—0.8521 V, short-circuit current—25.3 mA cm(−2), fill factor—84.76%, and efficiency—18.27%.