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High-performance thermoelectric silver selenide thin films cation exchanged from a copper selenide template
Over the past decade, Ag(2)Se has attracted increasing attention due to its potentially excellent thermoelectric (TE) performance as an n-type semiconductor. It has been considered a promising alternative to Bi–Te alloys and other commonly used yet toxic and/or expensive TE materials. To optimize th...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
RSC
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9416934/ https://www.ncbi.nlm.nih.gov/pubmed/36133987 http://dx.doi.org/10.1039/c9na00605b |
Sumario: | Over the past decade, Ag(2)Se has attracted increasing attention due to its potentially excellent thermoelectric (TE) performance as an n-type semiconductor. It has been considered a promising alternative to Bi–Te alloys and other commonly used yet toxic and/or expensive TE materials. To optimize the TE performance of Ag(2)Se, recent research has focused on fabricating nanosized Ag(2)Se. However, synthesizing Ag(2)Se nanoparticles involves energy-intensive and time-consuming techniques with poor yield of final product. In this work, we report a low-cost, solution-processed approach that enables the formation of Ag(2)Se thin films from Cu(2−x)Se template films via cation exchange at room temperature. Our simple two-step method involves fabricating Cu(2−x)Se thin films by the thiol-amine dissolution of bulk Cu(2)Se, followed by soaking Cu(2−x)Se films in AgNO(3) solution and annealing to form Ag(2)Se. We report an average power factor (PF) of 617 ± 82 μW m(−1) K(−2) and a corresponding ZT value of 0.35 at room temperature. We obtained a maximum PF of 825 μW m(−1) K(−2) and a ZT value of 0.46 at room temperature for our best-performing Ag(2)Se thin-film after soaking for 5 minutes. These high PFs have been achieved via full solution processing without hot-pressing. |
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