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Hyperfine interaction in atomically thin transition metal dichalcogenides

The spin dynamics of localized charge carriers is mainly driven by hyperfine interaction with nuclear spins. Here we develop a theory of hyperfine interaction in transition metal dichalcogenide monolayers. Using group representation theory and the tight binding model we derive effective Hamiltonians...

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Detalles Bibliográficos
Autores principales: Avdeev, Ivan D., Smirnov, Dmitry S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417057/
https://www.ncbi.nlm.nih.gov/pubmed/36132728
http://dx.doi.org/10.1039/c8na00360b
Descripción
Sumario:The spin dynamics of localized charge carriers is mainly driven by hyperfine interaction with nuclear spins. Here we develop a theory of hyperfine interaction in transition metal dichalcogenide monolayers. Using group representation theory and the tight binding model we derive effective Hamiltonians of the intervalley hyperfine interaction in the conduction and valence bands. The spin–valley locking and pronounced spin–orbit splitting lead to a specific form of hyperfine interaction, which we call “helical”. We also demonstrate that the hyperfine interaction is noncollinear for chalcogen atoms in the general case. At the same time in the upper valence band the hyperfine interaction is purely of the Ising type, which suggests that the spin–valley polarization of localized holes in transition metal dichalcogenide monolayers can be conserved for a particularly long time.