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A high-performance and flexible thermoelectric generator based on the solution-processed composites of reduced graphene oxide nanosheets and bismuth telluride nanoplates
The fabrication of a flexible thermoelectric generator (TEG) with both high power output and good flexibility has drawn considerable attention. Solution-processed inorganic nanocrystals have good processibility in interface to retain excellent electrical properties of nanocrystals and can be process...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
RSC
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417153/ https://www.ncbi.nlm.nih.gov/pubmed/36134279 http://dx.doi.org/10.1039/d0na00118j |
Sumario: | The fabrication of a flexible thermoelectric generator (TEG) with both high power output and good flexibility has drawn considerable attention. Solution-processed inorganic nanocrystals have good processibility in interface to retain excellent electrical properties of nanocrystals and can be processed into thin films on a flexible substrate by an easy scale-up printing or coating method. However, a high-performance TEG device based on inorganic solution-processed materials also poses challenges when it comes to flexibility of the whole device. Herein, flexible planar TEG devices are fabricated by printing an ink mixture comprising solution-processed bismuth telluride (Bi(2)Te(3)) nanoplates with reduced-graphene oxide (rGO) nanosheets onto flexible polyimide substrates. The interface treatment by hot ethylenediamine and the appropriate amount of rGO contribute to the high electrical properties of the material. Also, when rGO nanosheets of 1% mass ratio are added, the optimum power output of the corresponding rGO/Bi(2)Te(3) TEG device with six elements reaches ∼1.72 μW at a temperature difference of 20 K. Moreover, owing to the contribution from flexible rGO nanosheets, the suitable thickness of each element, and the artful connection of elements with a soft copper wire in the devices, the 1% rGO/Bi(2)Te(3) TEG device was found to be robust, and its electrical resistance merely changes by 2% after bending 1000 cycles on 5 mm in bending. These inorganic-based TEGs with both high performance and good flexibility will promote the development of new generation energy devices in the field of flexible electronics. |
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