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A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing

Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphoru...

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Autores principales: Su, Bao-Wang, Yao, Bin-Wei, Zhang, Xi-Lin, Huang, Kai-Xuan, Li, De-Kang, Guo, Hao-Wei, Li, Xiao-Kuan, Chen, Xu-Dong, Liu, Zhi-Bo, Tian, Jian-Guo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417257/
https://www.ncbi.nlm.nih.gov/pubmed/36132297
http://dx.doi.org/10.1039/d0na00201a
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author Su, Bao-Wang
Yao, Bin-Wei
Zhang, Xi-Lin
Huang, Kai-Xuan
Li, De-Kang
Guo, Hao-Wei
Li, Xiao-Kuan
Chen, Xu-Dong
Liu, Zhi-Bo
Tian, Jian-Guo
author_facet Su, Bao-Wang
Yao, Bin-Wei
Zhang, Xi-Lin
Huang, Kai-Xuan
Li, De-Kang
Guo, Hao-Wei
Li, Xiao-Kuan
Chen, Xu-Dong
Liu, Zhi-Bo
Tian, Jian-Guo
author_sort Su, Bao-Wang
collection PubMed
description Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS(2), with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of β = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials.
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spelling pubmed-94172572022-09-20 A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing Su, Bao-Wang Yao, Bin-Wei Zhang, Xi-Lin Huang, Kai-Xuan Li, De-Kang Guo, Hao-Wei Li, Xiao-Kuan Chen, Xu-Dong Liu, Zhi-Bo Tian, Jian-Guo Nanoscale Adv Chemistry Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS(2), with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of β = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials. RSC 2020-03-18 /pmc/articles/PMC9417257/ /pubmed/36132297 http://dx.doi.org/10.1039/d0na00201a Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by/3.0/
spellingShingle Chemistry
Su, Bao-Wang
Yao, Bin-Wei
Zhang, Xi-Lin
Huang, Kai-Xuan
Li, De-Kang
Guo, Hao-Wei
Li, Xiao-Kuan
Chen, Xu-Dong
Liu, Zhi-Bo
Tian, Jian-Guo
A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing
title A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing
title_full A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing
title_fullStr A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing
title_full_unstemmed A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing
title_short A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing
title_sort gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417257/
https://www.ncbi.nlm.nih.gov/pubmed/36132297
http://dx.doi.org/10.1039/d0na00201a
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