Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures

In group III-nitride based semiconductor structures, the incorporation of high-indium-composition InGaN has been severely limited by extremely inefficient strain-induced polarization fields and prohibitively large defect densities. So far, there is no clear approach to solve this issue. Here, we hav...

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Detalles Bibliográficos
Autores principales: Um, Dae-Young, Ra, Yong-Ho, Park, Ji-Hyeon, Hong, Ga-Eun, Lee, Cheul-Ro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417258/
https://www.ncbi.nlm.nih.gov/pubmed/36132351
http://dx.doi.org/10.1039/d1na00338k

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417258/
https://www.ncbi.nlm.nih.gov/pubmed/36132351
http://dx.doi.org/10.1039/d1na00338k

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