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Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures
In group III-nitride based semiconductor structures, the incorporation of high-indium-composition InGaN has been severely limited by extremely inefficient strain-induced polarization fields and prohibitively large defect densities. So far, there is no clear approach to solve this issue. Here, we hav...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417258/ https://www.ncbi.nlm.nih.gov/pubmed/36132351 http://dx.doi.org/10.1039/d1na00338k |