Integration of highly anisotropic multiferroic BaTiO(3)–Fe nanocomposite thin films on Si towards device applications

Integration of highly anisotropic multiferroic thin films on silicon substrates is a critical step towards low-cost devices, especially high-speed and low-power consumption memories. In this work, an oxide–metal vertically aligned nanocomposite (VAN) platform has been used to successfully demonstrat...

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Detalles Bibliográficos
Autores principales: Kalaswad, Matias, Zhang, Bruce, Wang, Xuejing, Wang, Han, Gao, Xingyao, Wang, Haiyan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417584/
https://www.ncbi.nlm.nih.gov/pubmed/36132794
http://dx.doi.org/10.1039/d0na00405g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417584/
https://www.ncbi.nlm.nih.gov/pubmed/36132794
http://dx.doi.org/10.1039/d0na00405g

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