Cargando…
Reconfigurable carrier type and photodetection of MoTe(2) of various thicknesses by deep ultraviolet light illumination
Tuning of the Fermi level in transition metal dichalcogenides (TMDCs) leads to devices with excellent electrical and optical properties. In this study, we controlled the Fermi level of MoTe(2) by deep ultraviolet (DUV) light illumination in different gaseous environments. Specifically, we investigat...
Autores principales: | Ko, Byung Min, Khan, Muhammad Farooq, Dastgeer, Ghulam, Han, Gyu Nam, Khan, Muhammad Asghar, Eom, Jonghwa |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
RSC
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417606/ https://www.ncbi.nlm.nih.gov/pubmed/36132280 http://dx.doi.org/10.1039/d1na00881a |
Ejemplares similares
-
The non-volatile electrostatic doping effect in MoTe(2) field-effect transistors controlled by hexagonal boron nitride and a metal gate
por: Khan, Muhammad Asghar, et al.
Publicado: (2022) -
Gate Tunable Transport in Graphene/MoS(2)/(Cr/Au) Vertical Field-Effect Transistors
por: Nazir, Ghazanfar, et al.
Publicado: (2017) -
Formation of an MoTe(2) based Schottky junction employing ultra-low and high resistive metal contacts
por: Aftab, Sikandar, et al.
Publicado: (2019) -
Highly Sensitive, Ultrafast, and Broadband Photo‐Detecting Field‐Effect Transistor with Transition‐Metal Dichalcogenide van der Waals Heterostructures of MoTe(2) and PdSe(2)
por: Afzal, Amir Muhammad, et al.
Publicado: (2021) -
Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS(2) films
por: Afzal, Amir Muhammad, et al.
Publicado: (2018)