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Antiferromagnetic spin ordering in two-dimensional honeycomb lattice of SiP(3)

Magnetism in low-dimensional materials has been of sustained interest due to its intriguing quantum mechanical origin and promising device applications. Here, we propose a buckled honeycomb lattice of stoichiometry SiP(3), a two-dimensional binary group-IV and V material that exhibits an antiferroma...

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Autores principales: Adhikary, Souren, Dutta, Sudipta, Mohakud, Sasmita
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417914/
https://www.ncbi.nlm.nih.gov/pubmed/36133774
http://dx.doi.org/10.1039/d1na00101a
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author Adhikary, Souren
Dutta, Sudipta
Mohakud, Sasmita
author_facet Adhikary, Souren
Dutta, Sudipta
Mohakud, Sasmita
author_sort Adhikary, Souren
collection PubMed
description Magnetism in low-dimensional materials has been of sustained interest due to its intriguing quantum mechanical origin and promising device applications. Here, we propose a buckled honeycomb lattice of stoichiometry SiP(3), a two-dimensional binary group-IV and V material that exhibits an antiferromagnetic ground state with itinerant electrons. Here we perform elemental Si substitution in pristine blue phosphorene to downshift the Fermi energy and induce the Fermi instability that results in a spin polarized ground state. Within first-principles calculations, we observe antiferromagnetic spin alignment between adjacent ferromagnetic triangular domains where each Si atom is coupled with three neighboring P atoms with a ferromagnetic interaction. Such unique spin structure and resulting magnetic ground state are unprecedented in defect-free two-dimensional materials made of only p-block elements. This metal-free magnetism can be exploited for advanced spintronic and memory storage applications.
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spelling pubmed-94179142022-09-20 Antiferromagnetic spin ordering in two-dimensional honeycomb lattice of SiP(3) Adhikary, Souren Dutta, Sudipta Mohakud, Sasmita Nanoscale Adv Chemistry Magnetism in low-dimensional materials has been of sustained interest due to its intriguing quantum mechanical origin and promising device applications. Here, we propose a buckled honeycomb lattice of stoichiometry SiP(3), a two-dimensional binary group-IV and V material that exhibits an antiferromagnetic ground state with itinerant electrons. Here we perform elemental Si substitution in pristine blue phosphorene to downshift the Fermi energy and induce the Fermi instability that results in a spin polarized ground state. Within first-principles calculations, we observe antiferromagnetic spin alignment between adjacent ferromagnetic triangular domains where each Si atom is coupled with three neighboring P atoms with a ferromagnetic interaction. Such unique spin structure and resulting magnetic ground state are unprecedented in defect-free two-dimensional materials made of only p-block elements. This metal-free magnetism can be exploited for advanced spintronic and memory storage applications. RSC 2021-03-22 /pmc/articles/PMC9417914/ /pubmed/36133774 http://dx.doi.org/10.1039/d1na00101a Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Adhikary, Souren
Dutta, Sudipta
Mohakud, Sasmita
Antiferromagnetic spin ordering in two-dimensional honeycomb lattice of SiP(3)
title Antiferromagnetic spin ordering in two-dimensional honeycomb lattice of SiP(3)
title_full Antiferromagnetic spin ordering in two-dimensional honeycomb lattice of SiP(3)
title_fullStr Antiferromagnetic spin ordering in two-dimensional honeycomb lattice of SiP(3)
title_full_unstemmed Antiferromagnetic spin ordering in two-dimensional honeycomb lattice of SiP(3)
title_short Antiferromagnetic spin ordering in two-dimensional honeycomb lattice of SiP(3)
title_sort antiferromagnetic spin ordering in two-dimensional honeycomb lattice of sip(3)
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417914/
https://www.ncbi.nlm.nih.gov/pubmed/36133774
http://dx.doi.org/10.1039/d1na00101a
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