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MnMoO(4)-S nanosheets with rich oxygen vacancies for high-performance supercapacitors

The structure of materials is closely related to their electrochemical properties. MnMoO(4) materials have good stability as supercapacitors but their specific capacitance performance is not excellent. To improve electrochemical performance of MnMoO(4), this study conducts secondary hydrothermal tre...

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Detalles Bibliográficos
Autores principales: Fu, Hao, Wang, Meixin, Ma, Qing, Wang, Mingwen, Ma, Xiping, Ye, Yaping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9417920/
https://www.ncbi.nlm.nih.gov/pubmed/36132293
http://dx.doi.org/10.1039/d2na00148a
Descripción
Sumario:The structure of materials is closely related to their electrochemical properties. MnMoO(4) materials have good stability as supercapacitors but their specific capacitance performance is not excellent. To improve electrochemical performance of MnMoO(4), this study conducts secondary hydrothermal treatment in thiourea solution on MnMoO(4) electrode material grown on nickel foam synthesized by traditional hydrothermal method. A more compact S-doped MnMoO(4) electrode material with more oxygen vacancies and higher specific capacitance was obtained. At the current density of 1 A g(−1), the specific capacitance of the composite material reached 2526.7 F g(−1), which increased by 140.9% compared with that of ordinary MnMoO(4) material. The capacitance retention rate of the composite material was 95.56% after 2000 cycles at 10 A g(−1). An asymmetric supercapacitor was fabricated using S-doped MnMoO(4) as the positive electrode, activated carbon as the negative electrode, and 6 mol L(−1) KOH solution as the electrolyte. The specific capacitance of the assembled supercapacitor was 117.50 F g(−1) at 1 A g(−1), and a high energy density of 47.16 W h kg(−1) at the power density of 849.98 W kg(−1) was recorded. This method greatly improves the specific capacitance of MnMoO(4) through simple processing, which makes it have great application potential.