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Plasmon-induced ultrafast charge transfer in single-particulate Cu(1.94)S–ZnS nanoheterostructures

Recombination centers generated from structural and interfacial defects in nanoheterostructures (NHs) prevent effective photo-induced charge transfer and have blocked the advance of many photoresponsive applications. Strategies to construct high-quality interfaces in NHs are emerging but are limited...

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Detalles Bibliográficos
Autores principales: Guo, Xueyi, Liu, Sheng, Wang, Weijia, Li, Chongyao, Yang, Ying, Tian, Qinghua, Liu, Yong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418435/
https://www.ncbi.nlm.nih.gov/pubmed/36133727
http://dx.doi.org/10.1039/d1na00037c
Descripción
Sumario:Recombination centers generated from structural and interfacial defects in nanoheterostructures (NHs) prevent effective photo-induced charge transfer and have blocked the advance of many photoresponsive applications. Strategies to construct high-quality interfaces in NHs are emerging but are limited in the release of interfacial strain and the integrality of the sublattice. Herein, we synthesize single-particulate Cu(1.94)S–ZnS NHs with a continuous sublattice using a nanoscale cation exchange reaction (CE). Under near-infrared (NIR) radiation (λ = 1500 nm), femtosecond open-aperture (OA) Z-scan measurements are applied to investigate the nonlinear optical features of samples and verify the existence of plasma-induced charge transfer in the Cu(1.94)S–ZnS NHs system. The resulting charge transfer time (τ(CT)) of ∼0.091 picoseconds (ps) was confirmed by the femtosecond time-resolved pump–probe technique. Such an ultrafast charge transfer process has been rarely reported in semiconductor–semiconductor NHs. The results suggest that CE can be used as a promising tool to construct well-ordered interfacial structures, which are significant for the performance enhancement of NHs for photon utilization.