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Comment on “Design and circuit simulation of nanoscale vacuum channel transistors” by J. Xu, Y. Qin, Y. Shi, Y. Yang and X. Zhang, Nanoscale Adv., 2020, 2, 3582
These comments aim to correct some apparent weaknesses in the theory of field electron emission given in a recent paper about nanoscale vacuum channel transistors, and to improve the presentation of this theory. In particular, it is argued that a “simplified” formula stated in the paper should not b...
Autor principal: | Forbes, Richard G. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
RSC
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418473/ https://www.ncbi.nlm.nih.gov/pubmed/36133280 http://dx.doi.org/10.1039/d0na00687d |
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