A low Schottky barrier height and transport mechanism in gold–graphene–silicon (001) heterojunctions

The interface resistance at metal/semiconductor junctions has been a key issue for decades. The control of this resistance is dependent on the possibility to tune the Schottky barrier height. However, Fermi level pinning in these systems forbids a total control over interface resistance. The introdu...

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Detalles Bibliográficos
Autores principales: Courtin, Jules, Le Gall, Sylvain, Chrétien, Pascal, Moréac, Alain, Delhaye, Gabriel, Lépine, Bruno, Tricot, Sylvain, Turban, Pascal, Schieffer, Philippe, Le Breton, Jean-Christophe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418477/
https://www.ncbi.nlm.nih.gov/pubmed/36133562
http://dx.doi.org/10.1039/c9na00393b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418477/
https://www.ncbi.nlm.nih.gov/pubmed/36133562
http://dx.doi.org/10.1039/c9na00393b

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