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Schottky barrier lowering due to interface states in 2D heterophase devices
The Schottky barrier of a metal–semiconductor junction is one of the key quantities affecting the charge transport in a transistor. The Schottky barrier height depends on several factors, such as work function difference, local atomic configuration in the interface, and impurity doping. We show that...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418679/ https://www.ncbi.nlm.nih.gov/pubmed/36131736 http://dx.doi.org/10.1039/d0na00795a |