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Half-Dirac semimetals and the quantum anomalous Hall effect in Kagome Cd(2)N(3) lattices

Half-Dirac semimetals (HDSs), which possess 100% spin-polarizations for Dirac materials, are highly desirable for exploring various topological phases of matter as low-dimensionality opens unprecedented opportunities for manipulating the quantum state of low-cost electronic nanodevices. The search f...

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Detalles Bibliográficos
Autores principales: Li, Xin-Yang, Ji, Wei-Xiao, Wang, Pei-Ji, Zhang, Chang-Wen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418731/
https://www.ncbi.nlm.nih.gov/pubmed/36133851
http://dx.doi.org/10.1039/d0na00530d
Descripción
Sumario:Half-Dirac semimetals (HDSs), which possess 100% spin-polarizations for Dirac materials, are highly desirable for exploring various topological phases of matter as low-dimensionality opens unprecedented opportunities for manipulating the quantum state of low-cost electronic nanodevices. The search for high-temperature HDSs is still a current hotspot and yet challenging experimentally. Herein based on first-principles calculations, we propose the realization of Half Dirac semimetals (HDS) in two-dimensional (2D) Kagome transition-metal nitride Cd(2)N(3), which is robust against strain engineering. Monte Carlo simulations reveal that Cd(2)N(3) possesses a Curie temperature reaching up to T(C) = 225 K, which is much higher than that of the reported monolayers CrI(3) (T(C) = 45 K) and Cr(2)Ge(2)Te(6) (T(C) = 20 K). The band crossings in Cd(2)N(3) are gapped out by the spin–orbit coupling, which brings about the quantum anomalous Hall (QAH) effect with a sizeable band gap of E(g) = 4.9 meV, characterized by the nonzero Chern number (C = 1) and chiral edge states. A tight-binding model is further used to clarify the origin of HDSs and nontrivial electronic properties. The results suggest monolayer transition-metal nitrides as a promising platform to explore fascinating physical phenomena associated with novel 2D emergent HDSs and QAH insulators toward realistic spintronics devices, thus stimulating experimental interest.