Sequential growth and twisted stacking of chemical-vapor-deposited graphene

Adlayers have been one of the main concerns for controlled synthesis of graphene by the chemical vapor deposition (CVD) method. Here we investigate the CVD growth of graphene adlayers on copper (Cu) using isotope-labeling-based Raman spectroscopy and high-resolution atomic force microscopy (AFM). Th...

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Detalles Bibliográficos
Autores principales: Liu, Jinglan, Zhang, Xuewei, Zhang, Shuai, Zou, Zhenxing, Zhang, Zilong, Wu, Zehao, Xia, Yang, Li, Qunyang, Zhao, Pei, Wang, Hongtao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418772/
https://www.ncbi.nlm.nih.gov/pubmed/36133285
http://dx.doi.org/10.1039/d0na00982b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418772/
https://www.ncbi.nlm.nih.gov/pubmed/36133285
http://dx.doi.org/10.1039/d0na00982b

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