Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)

In this work we show that the incidence angle of group-III element fluxes plays a significant role in the diffusion-controlled growth of III–V nanowires (NWs) by molecular beam epitaxy (MBE). We present a thorough experimental study on the self-assisted growth of GaAs NWs by using a MBE reactor equi...

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Detalles Bibliográficos
Autores principales: Vettori, Marco, Danescu, Alexandre, Guan, Xin, Regreny, Philippe, Penuelas, José, Gendry, Michel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418788/
https://www.ncbi.nlm.nih.gov/pubmed/36134421
http://dx.doi.org/10.1039/c9na00443b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418788/
https://www.ncbi.nlm.nih.gov/pubmed/36134421
http://dx.doi.org/10.1039/c9na00443b

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