A wafer-scale synthesis of monolayer MoS(2) and their field-effect transistors toward practical applications

Molybdenum disulfide (MoS(2)) has attracted considerable research interest as a promising candidate for downscaling integrated electronics due to the special two-dimensional structure and unique physicochemical properties. However, it is still challenging to achieve large-area MoS(2) monolayers with desired material quality and electrical properties to fulfill the requirement for practical applications. Recently, a variety of investigations have focused on wafer-scale monolayer MoS(2) synthesis with high-quality. The 2D MoS(2) field-effect transistor (MoS(2)-FET) array with different configurations utilizes the high-quality MoS(2) film as channels and exhibits favorable performance. In this review, we illustrated the latest research advances in wafer-scale monolayer MoS(2) synthesis by different methods, including Au-assisted exfoliation, CVD, thin film sulfurization, MOCVD, ALD, VLS method, and the thermolysis of thiosalts. Then, an overview of MoS(2)-FET developments was provided based on large-area MoS(2) film with different device configurations and performances. The different applications of MoS(2)-FET in logic circuits, basic memory devices, and integrated photodetectors were also summarized. Lastly, we considered the perspective and challenges based on wafer-scale monolayer MoS(2) synthesis and MoS(2)-FET for developing practical applications in next-generation integrated electronics and flexible optoelectronics.