Improvement in hole transporting ability and device performance of quantum dot light emitting diodes

In this research, we demonstrate a novel approach to improve the device performance of quantum dot light emitting diodes (QLEDs) by blending an additive BYK-P105 with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as the hole transport layer. In addition, for the first time, poly...

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Detalles Bibliográficos
Autores principales: Chiu, Pei-Chieh, Yang, Sheng-Hsiung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419759/
https://www.ncbi.nlm.nih.gov/pubmed/36133973
http://dx.doi.org/10.1039/c9na00618d
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author Chiu, Pei-Chieh
Yang, Sheng-Hsiung
author_facet Chiu, Pei-Chieh
Yang, Sheng-Hsiung
author_sort Chiu, Pei-Chieh
collection PubMed
description In this research, we demonstrate a novel approach to improve the device performance of quantum dot light emitting diodes (QLEDs) by blending an additive BYK-P105 with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as the hole transport layer. In addition, for the first time, polyethylenimine ethoxylated (PEIE)-modified zinc oxide nanoparticles (ZnO NPs) as the electron transport layer were applied in regular-type QLEDs for achieving high device efficiency. A very high brightness of 139 909 cd m(−2) and current efficiency of 27.2 cd A(−1) were obtained for the optimized device with the configuration of ITO/PEDOT:PSS + BYK-P105/PVK/CdSe QDs/ZnO NPs/PEIE/LiF/Al that shows promising use in light-emitting applications.
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spelling pubmed-94197592022-09-20 Improvement in hole transporting ability and device performance of quantum dot light emitting diodes Chiu, Pei-Chieh Yang, Sheng-Hsiung Nanoscale Adv Chemistry In this research, we demonstrate a novel approach to improve the device performance of quantum dot light emitting diodes (QLEDs) by blending an additive BYK-P105 with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as the hole transport layer. In addition, for the first time, polyethylenimine ethoxylated (PEIE)-modified zinc oxide nanoparticles (ZnO NPs) as the electron transport layer were applied in regular-type QLEDs for achieving high device efficiency. A very high brightness of 139 909 cd m(−2) and current efficiency of 27.2 cd A(−1) were obtained for the optimized device with the configuration of ITO/PEDOT:PSS + BYK-P105/PVK/CdSe QDs/ZnO NPs/PEIE/LiF/Al that shows promising use in light-emitting applications. RSC 2019-11-21 /pmc/articles/PMC9419759/ /pubmed/36133973 http://dx.doi.org/10.1039/c9na00618d Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Chiu, Pei-Chieh
Yang, Sheng-Hsiung
Improvement in hole transporting ability and device performance of quantum dot light emitting diodes
title Improvement in hole transporting ability and device performance of quantum dot light emitting diodes
title_full Improvement in hole transporting ability and device performance of quantum dot light emitting diodes
title_fullStr Improvement in hole transporting ability and device performance of quantum dot light emitting diodes
title_full_unstemmed Improvement in hole transporting ability and device performance of quantum dot light emitting diodes
title_short Improvement in hole transporting ability and device performance of quantum dot light emitting diodes
title_sort improvement in hole transporting ability and device performance of quantum dot light emitting diodes
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419759/
https://www.ncbi.nlm.nih.gov/pubmed/36133973
http://dx.doi.org/10.1039/c9na00618d
work_keys_str_mv AT chiupeichieh improvementinholetransportingabilityanddeviceperformanceofquantumdotlightemittingdiodes
AT yangshenghsiung improvementinholetransportingabilityanddeviceperformanceofquantumdotlightemittingdiodes

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