Cargando…
Rectifying optoelectronic memory based on WSe(2)/graphene heterostructures
van der Waals heterostructures composed of two-dimensional materials vertically stacked have been extensively studied to develop various multifunctional devices. Here, we report WSe(2)/graphene heterostructure devices with a top floating gate that can serve as multifunctional devices. They exhibit g...
Autores principales: | Kim, Sung Hyun, Park, Myung Uk, Lee, ChangJun, Yi, Sum-Gyun, Kim, Myeongjin, Choi, Yongsuk, Cho, Jeong Ho, Yoo, Kyung-Hwa |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
RSC
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9419859/ https://www.ncbi.nlm.nih.gov/pubmed/36132353 http://dx.doi.org/10.1039/d1na00504a |
Ejemplares similares
-
Sizable bandgaps of graphene in 3d transition metal intercalated defective graphene/WSe(2) heterostructures
por: Zhang, Xiuyun, et al.
Publicado: (2019) -
Thermionic transport across gold-graphene-WSe(2) van der Waals heterostructures
por: Rosul, Md Golam, et al.
Publicado: (2019) -
Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe(2) Field-Effect Transistors
por: Seo, Junseok, et al.
Publicado: (2019) -
Stabilizing the Inverted Phase of a WSe(2)/BLG/WSe(2) Heterostructure via Hydrostatic Pressure
por: Kedves, Máté, et al.
Publicado: (2023) -
Observation of ultralong valley lifetime in WSe(2)/MoS(2) heterostructures
por: Kim, Jonghwan, et al.
Publicado: (2017)