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Ultra-broadband MIR super absorber using all silicon metasurface of triangular doped nanoprisms

Thermo-electric generation offers to be a solid candidate for both dealing with the temperature problems of photo-voltaic cells and increasing its total output power. However, it requires an efficient broadband absorber to harness the power found in the near and mid-infrared regions. In this work, w...

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Detalles Bibliográficos
Autores principales: Abdelsalam, Mostafa, Swillam, Mohamed A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9433398/
https://www.ncbi.nlm.nih.gov/pubmed/36045138
http://dx.doi.org/10.1038/s41598-022-18817-1
Descripción
Sumario:Thermo-electric generation offers to be a solid candidate for both dealing with the temperature problems of photo-voltaic cells and increasing its total output power. However, it requires an efficient broadband absorber to harness the power found in the near and mid-infrared regions. In this work, we discuss a new structure of nanoprisms that are made of doped silicon that acts as an ultra-broadband absorber in both regions. We also discuss the effect of the doping concentration. Additionally, we study the effect of a pure silicon thin film on top of the prisms. Finally, we’re able to find an optimized structure that can absorb 92.6% of the input power from 1 to [Formula: see text] m.