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High grain boundary recombination velocity in polycrystalline metal halide perovskites
Understanding carrier recombination processes in metal halide perovskites is fundamentally important to further improving the efficiency of perovskite solar cells, yet the accurate recombination velocity at grain boundaries (GBs) has not been determined. Here, we report the determination of carrier...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9451161/ https://www.ncbi.nlm.nih.gov/pubmed/36070394 http://dx.doi.org/10.1126/sciadv.abq8345 |
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author | Ni, Zhenyi Xu, Shuang Jiao, Haoyang Gu, Hangyu Fei, Chengbin Huang, Jinsong |
author_facet | Ni, Zhenyi Xu, Shuang Jiao, Haoyang Gu, Hangyu Fei, Chengbin Huang, Jinsong |
author_sort | Ni, Zhenyi |
collection | PubMed |
description | Understanding carrier recombination processes in metal halide perovskites is fundamentally important to further improving the efficiency of perovskite solar cells, yet the accurate recombination velocity at grain boundaries (GBs) has not been determined. Here, we report the determination of carrier recombination velocities at GBs (S(GB)) of polycrystalline perovskites by mapping the transient photoluminescence pattern change induced by the nonradiative recombination of carriers at GBs. Charge recombination at GBs is revealed to be even stronger than at surfaces of unpassivated films, with average S(GB) reaching 2200 to 3300 cm/s. Regular surface treatments do not passivate GBs because of the absence of contact at GBs. We find a surface treatment using tributyl(methyl)phosphonium dimethyl phosphate that can penetrate into GBs by partially dissolving GBs and converting it into one-dimensional perovskites. It reduces the average S(GB) by four times, with the lowest S(GB) of 410 cm/s, which is comparable to surface recombination velocities after passivation. |
format | Online Article Text |
id | pubmed-9451161 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | American Association for the Advancement of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-94511612022-09-29 High grain boundary recombination velocity in polycrystalline metal halide perovskites Ni, Zhenyi Xu, Shuang Jiao, Haoyang Gu, Hangyu Fei, Chengbin Huang, Jinsong Sci Adv Physical and Materials Sciences Understanding carrier recombination processes in metal halide perovskites is fundamentally important to further improving the efficiency of perovskite solar cells, yet the accurate recombination velocity at grain boundaries (GBs) has not been determined. Here, we report the determination of carrier recombination velocities at GBs (S(GB)) of polycrystalline perovskites by mapping the transient photoluminescence pattern change induced by the nonradiative recombination of carriers at GBs. Charge recombination at GBs is revealed to be even stronger than at surfaces of unpassivated films, with average S(GB) reaching 2200 to 3300 cm/s. Regular surface treatments do not passivate GBs because of the absence of contact at GBs. We find a surface treatment using tributyl(methyl)phosphonium dimethyl phosphate that can penetrate into GBs by partially dissolving GBs and converting it into one-dimensional perovskites. It reduces the average S(GB) by four times, with the lowest S(GB) of 410 cm/s, which is comparable to surface recombination velocities after passivation. American Association for the Advancement of Science 2022-09-07 /pmc/articles/PMC9451161/ /pubmed/36070394 http://dx.doi.org/10.1126/sciadv.abq8345 Text en Copyright © 2022 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). https://creativecommons.org/licenses/by-nc/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (https://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited. |
spellingShingle | Physical and Materials Sciences Ni, Zhenyi Xu, Shuang Jiao, Haoyang Gu, Hangyu Fei, Chengbin Huang, Jinsong High grain boundary recombination velocity in polycrystalline metal halide perovskites |
title | High grain boundary recombination velocity in polycrystalline metal halide perovskites |
title_full | High grain boundary recombination velocity in polycrystalline metal halide perovskites |
title_fullStr | High grain boundary recombination velocity in polycrystalline metal halide perovskites |
title_full_unstemmed | High grain boundary recombination velocity in polycrystalline metal halide perovskites |
title_short | High grain boundary recombination velocity in polycrystalline metal halide perovskites |
title_sort | high grain boundary recombination velocity in polycrystalline metal halide perovskites |
topic | Physical and Materials Sciences |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9451161/ https://www.ncbi.nlm.nih.gov/pubmed/36070394 http://dx.doi.org/10.1126/sciadv.abq8345 |
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