Gd/Mn Co-Doped CaBi(4)Ti(4)O(15) Aurivillius-Phase Ceramics: Structures, Electrical Conduction and Dielectric Relaxation Behaviors

In this work, Gd/Mn co-doped CaBi(4)Ti(4)O(15) Aurivillius-type ceramics with the formula of Ca(1-x)Gd(x)Bi(4)Ti(4)O(15) + xGd/0.2wt%MnCO(3) (abbreviated as CBT-xGd/0.2Mn) were prepared by the conventional solid-state reaction route. Firstly, the prepared ceramics were identified as the single CaBi(4)Ti(4)O(15) phase with orthorhombic symmetry and the change in lattice parameters detected from the Rietveld XRD refinement demonstrated that Gd(3+) was successfully substituted for Ca(2+) at the A-site. SEM observations further revealed that all samples were composed of the randomly orientated plate-like grains, and the corresponding average grain size gradually decreased with Gd content (x) increasing. For all compositions studied, the frequency independence of conductivity observed above 400 °C showed a nature of ionic conduction behavior, which was predominated by the long-range migration of oxygen vacancies. Based on the correlated barrier hopping (CBH) model, the maximum barrier height W(M), the dc conduction activation energy E(d)(c), as well as the hopping conduction activation energy E(p) were calculated for the CBT-xGd/0.2Mn ceramics. The composition with x = 0.06 was found to have the highest E(dc) value of 1.87 eV, as well as the lowest conductivity (1.8 × 10(−5) S/m at 600 °C) among these compositions. The electrical modules analysis for this composition further illustrated the degree of interaction between charge carrier β increases, with an increase in temperature from 500 °C to 600 °C, and then a turn to decrease when the temperature exceeded 600 °C. The value of β reached a maximum of 0.967 at 600 °C, indicating that the dielectric relaxation behavior at this temperature was closer to the ideal Debye type.