Tuning Schottky Barrier of Single-Layer MoS(2) Field-Effect Transistors with Graphene Electrodes

Two–dimensional materials have the potential to be applied in flexible and transparent electronics. In this study, single-layer MoS(2) field-effect transistors (FETs) with Au/Ti–graphene heteroelectrodes were fabricated to examine the effect of the electrodes on the electrical properties of the MoS(2) FETs. The contact barrier potential was tuned using an electric field. Asymmetrical gate behavior was observed owing to the difference between the MoS(2) FETs, specifically between the MoS(2) FETs with Au/Ti electrodes and those with graphene electrodes. The contact barrier of the MoS(2) FETs with Au/Ti electrodes did not change with the electric field. However, the contact barrier at the MoS(2)–graphene interface could be modulated. The MoS(2) FETs with Au/Ti–graphene electrodes exhibited enhanced on/off ratios (~10(2) times) and electron mobility (~2.5 times) compared to the MoS(2) FETs with Au/Ti electrodes. These results could improve the understanding of desirable contact formation for high-performance MoS(2) FETs and provide a facile route for viable electronic applications.