On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes

Despite the great potential of Hf(0.5)Zr(0.5)O(2) (HZO) ferroelectrics, reliability issues, such as wake-up, fatigue, endurance limitations, imprint and retention loss, impede the implementation of HZO to nonvolatile memory devices. Herein, a study of the reliability properties in HZO-based stacks w...

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Detalles Bibliográficos
Autores principales: Khakimov, Roman R., Chernikova, Anna G., Koroleva, Aleksandra A., Markeev, Andrey M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9459922/
https://www.ncbi.nlm.nih.gov/pubmed/36080096
http://dx.doi.org/10.3390/nano12173059

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9459922/
https://www.ncbi.nlm.nih.gov/pubmed/36080096
http://dx.doi.org/10.3390/nano12173059

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