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On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes
Despite the great potential of Hf(0.5)Zr(0.5)O(2) (HZO) ferroelectrics, reliability issues, such as wake-up, fatigue, endurance limitations, imprint and retention loss, impede the implementation of HZO to nonvolatile memory devices. Herein, a study of the reliability properties in HZO-based stacks w...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9459922/ https://www.ncbi.nlm.nih.gov/pubmed/36080096 http://dx.doi.org/10.3390/nano12173059 |