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High-Frequency Surface Acoustic Wave Resonator with Diamond/AlN/IDT/AlN/Diamond Multilayer Structure

A high-frequency surface acoustic wave (SAW) resonator, based on sandwiched interdigital transducer (IDT), is presented. The resonator has the structure of diamond/AlN/IDT/AlN/diamond, with Si as the substrate. The results show that its phase velocity and electromechanical coupling coefficient are b...

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Autores principales: Lei, Liang, Dong, Bo, Hu, Yuxuan, Lei, Yisong, Wang, Zhizhong, Ruan, Shuangchen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9460613/
https://www.ncbi.nlm.nih.gov/pubmed/36080938
http://dx.doi.org/10.3390/s22176479
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author Lei, Liang
Dong, Bo
Hu, Yuxuan
Lei, Yisong
Wang, Zhizhong
Ruan, Shuangchen
author_facet Lei, Liang
Dong, Bo
Hu, Yuxuan
Lei, Yisong
Wang, Zhizhong
Ruan, Shuangchen
author_sort Lei, Liang
collection PubMed
description A high-frequency surface acoustic wave (SAW) resonator, based on sandwiched interdigital transducer (IDT), is presented. The resonator has the structure of diamond/AlN/IDT/AlN/diamond, with Si as the substrate. The results show that its phase velocity and electromechanical coupling coefficient are both significantly improved, compared with that of the traditional interdigital transduce-free surface structure. The M2 mode of the sandwiched structure can excite an operation frequency up to 6.15 GHz, with an electromechanical coupling coefficient of 5.53%, phase velocity of 12,470 m/s, and temperature coefficient of frequency of −6.3 ppm/°C. This structure provides a new ideal for the design of high-performance and high-frequency SAW devices.
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spelling pubmed-94606132022-09-10 High-Frequency Surface Acoustic Wave Resonator with Diamond/AlN/IDT/AlN/Diamond Multilayer Structure Lei, Liang Dong, Bo Hu, Yuxuan Lei, Yisong Wang, Zhizhong Ruan, Shuangchen Sensors (Basel) Article A high-frequency surface acoustic wave (SAW) resonator, based on sandwiched interdigital transducer (IDT), is presented. The resonator has the structure of diamond/AlN/IDT/AlN/diamond, with Si as the substrate. The results show that its phase velocity and electromechanical coupling coefficient are both significantly improved, compared with that of the traditional interdigital transduce-free surface structure. The M2 mode of the sandwiched structure can excite an operation frequency up to 6.15 GHz, with an electromechanical coupling coefficient of 5.53%, phase velocity of 12,470 m/s, and temperature coefficient of frequency of −6.3 ppm/°C. This structure provides a new ideal for the design of high-performance and high-frequency SAW devices. MDPI 2022-08-28 /pmc/articles/PMC9460613/ /pubmed/36080938 http://dx.doi.org/10.3390/s22176479 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Lei, Liang
Dong, Bo
Hu, Yuxuan
Lei, Yisong
Wang, Zhizhong
Ruan, Shuangchen
High-Frequency Surface Acoustic Wave Resonator with Diamond/AlN/IDT/AlN/Diamond Multilayer Structure
title High-Frequency Surface Acoustic Wave Resonator with Diamond/AlN/IDT/AlN/Diamond Multilayer Structure
title_full High-Frequency Surface Acoustic Wave Resonator with Diamond/AlN/IDT/AlN/Diamond Multilayer Structure
title_fullStr High-Frequency Surface Acoustic Wave Resonator with Diamond/AlN/IDT/AlN/Diamond Multilayer Structure
title_full_unstemmed High-Frequency Surface Acoustic Wave Resonator with Diamond/AlN/IDT/AlN/Diamond Multilayer Structure
title_short High-Frequency Surface Acoustic Wave Resonator with Diamond/AlN/IDT/AlN/Diamond Multilayer Structure
title_sort high-frequency surface acoustic wave resonator with diamond/aln/idt/aln/diamond multilayer structure
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9460613/
https://www.ncbi.nlm.nih.gov/pubmed/36080938
http://dx.doi.org/10.3390/s22176479
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