Regulating interface Schottky barriers toward a high-performance self-powered imaging photodetector

Two-dimensional (2D) layered organic–inorganic hybrid perovskites have attracted wide attention in high-performance optoelectronic applications due to their good stability and excellent optoelectronic properties. Here, a high-performance self-powered photodetector is realized based on an asymmetrical metal–semiconductor–metal (MSM) device structure (Pt-(PEA)(2)PbI(4) SC-Ag), which introduces a strong built-in electric field by regulating interface Schottky barriers. Benefitting from excellent built-in electrical potential, the photodetector shows attractive photovoltaic properties without any power supply, including high photo-responsivity (114.07 mA W(−1)), fast response time (1.2 μs/582 μs) and high detectivity (4.56 × 10(12) Jones). Furthermore, it exhibits high-fidelity imaging capability at zero bias voltage. In addition, the photodetectors show excellent stability by maintaining 99.4% of the initial responsivity in air after 84 days. This work enables a significant advance in perovskite SC photodetectors for developing stable and high-performance devices.