HfO(x)/AlO(y) Superlattice‐Like Memristive Synapse (Adv. Sci. 21/2022)

Superlattice‐Like Memristive Synapse In article number 2201446, Xingsheng Wang and co‐workers propose a HfO(x)/AlO(y) superlattice‐like memristor and achieve controllable multi‐level conductance switching in the electric synapse for neuromorphic computing. By periodically inserting the higher migrat...

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Detalles Bibliográficos
Autores principales: Wang, Chengxu, Mao, Ge‐Qi, Huang, Menghua, Huang, Enming, Zhang, Zichong, Yuan, Junhui, Cheng, Weiming, Xue, Kan‐Hao, Wang, Xingsheng, Miao, Xiangshui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Frontispiece
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9467862/
http://dx.doi.org/10.1002/advs.202270131
Descripción
Sumario:Superlattice‐Like Memristive Synapse In article number 2201446, Xingsheng Wang and co‐workers propose a HfO(x)/AlO(y) superlattice‐like memristor and achieve controllable multi‐level conductance switching in the electric synapse for neuromorphic computing. By periodically inserting the higher migration barrier of oxygen vacancy (VO) in Al(2)O(3) atomic layer into HfO(x), it gracefully controls the VO migration and the formation and rupture of conductive filaments. [Image: see text]

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