HfO(x)/AlO(y) Superlattice‐Like Memristive Synapse (Adv. Sci. 21/2022)

Superlattice‐Like Memristive Synapse In article number 2201446, Xingsheng Wang and co‐workers propose a HfO(x)/AlO(y) superlattice‐like memristor and achieve controllable multi‐level conductance switching in the electric synapse for neuromorphic computing. By periodically inserting the higher migrat...

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Autores principales: Wang, Chengxu, Mao, Ge‐Qi, Huang, Menghua, Huang, Enming, Zhang, Zichong, Yuan, Junhui, Cheng, Weiming, Xue, Kan‐Hao, Wang, Xingsheng, Miao, Xiangshui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Frontispiece
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9467862/
http://dx.doi.org/10.1002/advs.202270131
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author Wang, Chengxu
Mao, Ge‐Qi
Huang, Menghua
Huang, Enming
Zhang, Zichong
Yuan, Junhui
Cheng, Weiming
Xue, Kan‐Hao
Wang, Xingsheng
Miao, Xiangshui
author_facet Wang, Chengxu
Mao, Ge‐Qi
Huang, Menghua
Huang, Enming
Zhang, Zichong
Yuan, Junhui
Cheng, Weiming
Xue, Kan‐Hao
Wang, Xingsheng
Miao, Xiangshui
author_sort Wang, Chengxu
collection PubMed
description Superlattice‐Like Memristive Synapse In article number 2201446, Xingsheng Wang and co‐workers propose a HfO(x)/AlO(y) superlattice‐like memristor and achieve controllable multi‐level conductance switching in the electric synapse for neuromorphic computing. By periodically inserting the higher migration barrier of oxygen vacancy (VO) in Al(2)O(3) atomic layer into HfO(x), it gracefully controls the VO migration and the formation and rupture of conductive filaments. [Image: see text]
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spelling pubmed-94678622022-09-27 HfO(x)/AlO(y) Superlattice‐Like Memristive Synapse (Adv. Sci. 21/2022) Wang, Chengxu Mao, Ge‐Qi Huang, Menghua Huang, Enming Zhang, Zichong Yuan, Junhui Cheng, Weiming Xue, Kan‐Hao Wang, Xingsheng Miao, Xiangshui Adv Sci (Weinh) Frontispiece Superlattice‐Like Memristive Synapse In article number 2201446, Xingsheng Wang and co‐workers propose a HfO(x)/AlO(y) superlattice‐like memristor and achieve controllable multi‐level conductance switching in the electric synapse for neuromorphic computing. By periodically inserting the higher migration barrier of oxygen vacancy (VO) in Al(2)O(3) atomic layer into HfO(x), it gracefully controls the VO migration and the formation and rupture of conductive filaments. [Image: see text] John Wiley and Sons Inc. 2022-07-25 /pmc/articles/PMC9467862/ http://dx.doi.org/10.1002/advs.202270131 Text en © 2022 Wiley‐VCH GmbH https://creativecommons.org/licenses/by-nc/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc/4.0/ (https://creativecommons.org/licenses/by-nc/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.
spellingShingle Frontispiece
Wang, Chengxu
Mao, Ge‐Qi
Huang, Menghua
Huang, Enming
Zhang, Zichong
Yuan, Junhui
Cheng, Weiming
Xue, Kan‐Hao
Wang, Xingsheng
Miao, Xiangshui
HfO(x)/AlO(y) Superlattice‐Like Memristive Synapse (Adv. Sci. 21/2022)
title HfO(x)/AlO(y) Superlattice‐Like Memristive Synapse (Adv. Sci. 21/2022)
title_full HfO(x)/AlO(y) Superlattice‐Like Memristive Synapse (Adv. Sci. 21/2022)
title_fullStr HfO(x)/AlO(y) Superlattice‐Like Memristive Synapse (Adv. Sci. 21/2022)
title_full_unstemmed HfO(x)/AlO(y) Superlattice‐Like Memristive Synapse (Adv. Sci. 21/2022)
title_short HfO(x)/AlO(y) Superlattice‐Like Memristive Synapse (Adv. Sci. 21/2022)
title_sort hfo(x)/alo(y) superlattice‐like memristive synapse (adv. sci. 21/2022)
topic Frontispiece
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9467862/
http://dx.doi.org/10.1002/advs.202270131
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