Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots

We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 μm leng...

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Detalles Bibliográficos
Autores principales: An, Sung Jin, Bae, Myung-Ho, Lee, Myoung-Jae, Song, Man Suk, Madsen, Morten H., Nygård, Jesper, Schönenberger, Christian, Baumgartner, Andreas, Seo, Jungpil, Jung, Minkyung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9470037/
https://www.ncbi.nlm.nih.gov/pubmed/36133323
http://dx.doi.org/10.1039/d2na00372d

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9470037/
https://www.ncbi.nlm.nih.gov/pubmed/36133323
http://dx.doi.org/10.1039/d2na00372d

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