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Self-assembled single-crystal bimodal porous GaN exhibiting a petal effect: application as a sensing platform and substrate for optical devices

This paper investigates the petal effect (hydrophobicity and strong adhesion) observed on single-crystal bimodal porous GaN (porous GaN), which has almost the same electrical properties as bulk GaN. The water contact angles of porous GaN were 100°–135° despite the intrinsic hydrophilic nature of GaN...

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Autores principales: Kimura, Taishi, Murase, Masakazu, Yamada, Yuri, Mizoshita, Norihiro, Nakamura, Daisuke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9470053/
https://www.ncbi.nlm.nih.gov/pubmed/36133321
http://dx.doi.org/10.1039/d2na00164k
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author Kimura, Taishi
Murase, Masakazu
Yamada, Yuri
Mizoshita, Norihiro
Nakamura, Daisuke
author_facet Kimura, Taishi
Murase, Masakazu
Yamada, Yuri
Mizoshita, Norihiro
Nakamura, Daisuke
author_sort Kimura, Taishi
collection PubMed
description This paper investigates the petal effect (hydrophobicity and strong adhesion) observed on single-crystal bimodal porous GaN (porous GaN), which has almost the same electrical properties as bulk GaN. The water contact angles of porous GaN were 100°–135° despite the intrinsic hydrophilic nature of GaN. Moreover, it was demonstrated that the petal effect of porous GaN leads to the uniform attachment of water solutions, enabling highly uniform and aggregation-free attachment of chemicals and quantum dots. These results indicate that porous GaN can be applied in quantum dot light-emitting diodes and as an analytical substrate.
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spelling pubmed-94700532022-09-20 Self-assembled single-crystal bimodal porous GaN exhibiting a petal effect: application as a sensing platform and substrate for optical devices Kimura, Taishi Murase, Masakazu Yamada, Yuri Mizoshita, Norihiro Nakamura, Daisuke Nanoscale Adv Chemistry This paper investigates the petal effect (hydrophobicity and strong adhesion) observed on single-crystal bimodal porous GaN (porous GaN), which has almost the same electrical properties as bulk GaN. The water contact angles of porous GaN were 100°–135° despite the intrinsic hydrophilic nature of GaN. Moreover, it was demonstrated that the petal effect of porous GaN leads to the uniform attachment of water solutions, enabling highly uniform and aggregation-free attachment of chemicals and quantum dots. These results indicate that porous GaN can be applied in quantum dot light-emitting diodes and as an analytical substrate. RSC 2022-06-27 /pmc/articles/PMC9470053/ /pubmed/36133321 http://dx.doi.org/10.1039/d2na00164k Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by/3.0/
spellingShingle Chemistry
Kimura, Taishi
Murase, Masakazu
Yamada, Yuri
Mizoshita, Norihiro
Nakamura, Daisuke
Self-assembled single-crystal bimodal porous GaN exhibiting a petal effect: application as a sensing platform and substrate for optical devices
title Self-assembled single-crystal bimodal porous GaN exhibiting a petal effect: application as a sensing platform and substrate for optical devices
title_full Self-assembled single-crystal bimodal porous GaN exhibiting a petal effect: application as a sensing platform and substrate for optical devices
title_fullStr Self-assembled single-crystal bimodal porous GaN exhibiting a petal effect: application as a sensing platform and substrate for optical devices
title_full_unstemmed Self-assembled single-crystal bimodal porous GaN exhibiting a petal effect: application as a sensing platform and substrate for optical devices
title_short Self-assembled single-crystal bimodal porous GaN exhibiting a petal effect: application as a sensing platform and substrate for optical devices
title_sort self-assembled single-crystal bimodal porous gan exhibiting a petal effect: application as a sensing platform and substrate for optical devices
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9470053/
https://www.ncbi.nlm.nih.gov/pubmed/36133321
http://dx.doi.org/10.1039/d2na00164k
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