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Growth of graphene with large single-crystal domains by Ni foam-assisted structure and its high-gain field-effect transistors
High-quality graphene materials and high-performance graphene transistors have attracted much attention in recent years. To obtain high-performance graphene transistors, large single-crystal graphene is needed. The synthesis of large-domain-sized single-crystal graphene requires low nucleation densi...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9473297/ https://www.ncbi.nlm.nih.gov/pubmed/36133206 http://dx.doi.org/10.1039/c8na00203g |