A ZnO/porous GaN heterojunction and its application as a humidity sensor

A heterojunction of ZnO/porous GaN (ZnO/PGAN) was fabricated and directly applied to a diode-type humidity sensor. ZnO disks were loaded onto PGAN using a spraying process. The structure and surface morphology of the ZnO/PGAN were characterized using X-ray diffraction and scanning electron microscop...

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Detalles Bibliográficos
Autores principales: Wang, Chao, Huang, Hui, Zhang, Miao-Rong, Song, Wei-Xing, Zhang, Long, Xi, Rui, Wang, Lu-Jia, Pan, Ge-Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9473300/
https://www.ncbi.nlm.nih.gov/pubmed/36133180
http://dx.doi.org/10.1039/c8na00243f
Descripción
Sumario:A heterojunction of ZnO/porous GaN (ZnO/PGAN) was fabricated and directly applied to a diode-type humidity sensor. ZnO disks were loaded onto PGAN using a spraying process. The structure and surface morphology of the ZnO/PGAN were characterized using X-ray diffraction and scanning electron microscopy. The heterojunction displayed an excellent diode nature, which was investigated using photoluminescence spectra and I–V characteristics. The excellent transport capability of ZnO/PGAN contributes to enhanced electron transfer, and hence results in high sensitivity and quick response/recovery properties under different relative humidity (RH) levels. In the range of 12–96% RH, a fast sensing response time as low as 7 s and a recovery time of 13 s can be achieved. The simple design of a ZnO/PGAN based humidity sensor highlights its potential in various applications.

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