Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells

[Image: see text] The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out using correlative transmission electron microscopy (TEM) and atom probe tomography (APT). The correlative TEM/APT analysis on the same TD reveals tha...

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Detalles Bibliográficos
Autores principales: Yamaguchi, Yudai, Kanitani, Yuya, Kudo, Yoshihiro, Uzuhashi, Jun, Ohkubo, Tadakatsu, Hono, Kazuhiro, Tomiya, Shigetaka
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9480092/
https://www.ncbi.nlm.nih.gov/pubmed/36048741
http://dx.doi.org/10.1021/acs.nanolett.2c01479

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9480092/
https://www.ncbi.nlm.nih.gov/pubmed/36048741
http://dx.doi.org/10.1021/acs.nanolett.2c01479

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