Cargando…

Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells

[Image: see text] The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out using correlative transmission electron microscopy (TEM) and atom probe tomography (APT). The correlative TEM/APT analysis on the same TD reveals tha...

Descripción completa

Detalles Bibliográficos
Autores principales:	Yamaguchi, Yudai, Kanitani, Yuya, Kudo, Yoshihiro, Uzuhashi, Jun, Ohkubo, Tadakatsu, Hono, Kazuhiro, Tomiya, Shigetaka
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2022
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9480092/ https://www.ncbi.nlm.nih.gov/pubmed/36048741 http://dx.doi.org/10.1021/acs.nanolett.2c01479

Ejemplares similares

Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities
por: Puchtler, Tim J., et al.
Publicado: (2014)

Indium segregation measured in InGaN quantum well layer
por: Deng, Zhen, et al.
Publicado: (2014)

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
por: Sarzyński, Marcin, et al.
Publicado: (2019)

Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content
por: Vasileiadis, I. G., et al.
Publicado: (2021)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
por: Cheng, Liwen, et al.
Publicado: (2021)

Characterisation of InGaN by Photoconductive Atomic Force Microscopy
por: Weatherley, Thomas F. K., et al.
Publicado: (2018)

Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD
por: Chen, Yung-Sheng, et al.
Publicado: (2014)

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells
por: Liu, Wei, et al.
Publicado: (2023)

Most frequently asked questions about the coercivity of Nd-Fe-B permanent magnets
por: Li, Jiangnan, et al.
Publicado: (2021)

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells
por: Li, Xuan, et al.
Publicado: (2021)

Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths
por: Li, Changfu, et al.
Publicado: (2017)

Direct imaging of Indium-rich triangular nanoprisms self-organized formed at the edges of InGaN/GaN core-shell nanorods
por: Schmidt, Gordon, et al.
Publicado: (2018)

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities
por: Lottigier, Pierre, et al.
Publicado: (2023)

Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT
por: Liu, Censong, et al.
Publicado: (2023)

The spin Hall effect of Bi-Sb alloys driven by thermally excited Dirac-like electrons
por: Chi, Zhendong, et al.
Publicado: (2020)

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process
por: Liu, Shuangtao, et al.
Publicado: (2019)

Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer
por: Zhou, Quanbin, et al.
Publicado: (2018)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

Study on the effect of size on InGaN red micro-LEDs
por: Horng, Ray-Hua, et al.
Publicado: (2022)

Intensive measures of luminescence in GaN/InGaN heterostructures
por: Hsiao, Jui-Ju, et al.
Publicado: (2019)

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
por: Li, Hongjian, et al.
Publicado: (2016)

Impact of Plasma Electron Flux on Plasma Damage‐Free Sputtering of Ultrathin Tin‐Doped Indium Oxide Contact Layer on p‐GaN for InGaN/GaN Light‐Emitting Diodes
por: Son, Kwang Jeong, et al.
Publicado: (2017)

Intersubband Transition in GaN/InGaN Multiple Quantum Wells
por: Chen, G., et al.
Publicado: (2015)

Voltage-Controlled Magnetic Anisotropy in Fe(1−x)Co(x)/Pd/MgO system
por: Shukla, Amit Kumar, et al.
Publicado: (2018)

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
por: Christian, George, et al.
Publicado: (2018)

Structural and optical analyses for InGaN-based red micro-LED
por: Hsiao, Fu-He, et al.
Publicado: (2023)

Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps
por: Barchuk, Mykhailo, et al.
Publicado: (2017)

Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates
por: Hamachi, Takeaki, et al.
Publicado: (2023)

Improving Output Efficiency of InGaN-Based MQW Green Laser Diodes by Modulating Indium Content of Quantum Barriers and Using Composite Lower Waveguide Layers
por: Chen, Zhenyu, et al.
Publicado: (2022)

InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters
por: Tan, Chee-Keong, et al.
Publicado: (2016)

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015)

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires
por: Jegenyes, Nikoletta, et al.
Publicado: (2018)

Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
por: Lin, Tao, et al.
Publicado: (2017)

InGaN as a Substrate for AC Photoelectrochemical Imaging
por: Zhou, Bo, et al.
Publicado: (2019)

Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress
por: Narita, Tetsuo, et al.
Publicado: (2022)

Blue light emission from the heterostructured ZnO/InGaN/GaN
por: Wang, Ti, et al.
Publicado: (2013)

Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen
por: Sousa, Marco A., et al.
Publicado: (2015)

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
por: Jiao, Qianqian, et al.
Publicado: (2016)

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
por: Park, Youngsin, et al.
Publicado: (2018)

Narrow Linewidth Distributed Bragg Reflectors Based on InGaN/GaN Laser
por: Xie, Wuze, et al.
Publicado: (2019)

Cannot write session to /tmp/vufind_sessions/sess_agbor0ibguu9b7qa4o5cuujeas