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Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors

The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN. It was found that neither dislocation density nor the concentration of carbon and ox...

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Autores principales: Huang, Yujie, Yang, Jing, Zhao, Degang, Zhang, Yuheng, Liu, Zongshun, Liang, Feng, Chen, Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9500879/
https://www.ncbi.nlm.nih.gov/pubmed/36144936
http://dx.doi.org/10.3390/nano12183148
_version_ 1784795331216539648
author Huang, Yujie
Yang, Jing
Zhao, Degang
Zhang, Yuheng
Liu, Zongshun
Liang, Feng
Chen, Ping
author_facet Huang, Yujie
Yang, Jing
Zhao, Degang
Zhang, Yuheng
Liu, Zongshun
Liang, Feng
Chen, Ping
author_sort Huang, Yujie
collection PubMed
description The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN. It was found that neither dislocation density nor the concentration of carbon and oxygen impurities made any remarkable difference in these AlGaN devices. However, the positron annihilation experiments showed that the concentration of Al or Ga vacancy defects (more likely Ga vacancy defects) in AlGaN active layers increased with the increase in Al content. It is assumed that the Al or Ga vacancy defects play a negative role in a detector’s performance, which increases the recombination of photogenerated carriers and reduces the detector responsivity. It is necessary to control the concentration of vacancy defects for the high performance AlGaN detectors.
format Online
Article
Text
id pubmed-9500879
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-95008792022-09-24 Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors Huang, Yujie Yang, Jing Zhao, Degang Zhang, Yuheng Liu, Zongshun Liang, Feng Chen, Ping Nanomaterials (Basel) Article The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN. It was found that neither dislocation density nor the concentration of carbon and oxygen impurities made any remarkable difference in these AlGaN devices. However, the positron annihilation experiments showed that the concentration of Al or Ga vacancy defects (more likely Ga vacancy defects) in AlGaN active layers increased with the increase in Al content. It is assumed that the Al or Ga vacancy defects play a negative role in a detector’s performance, which increases the recombination of photogenerated carriers and reduces the detector responsivity. It is necessary to control the concentration of vacancy defects for the high performance AlGaN detectors. MDPI 2022-09-11 /pmc/articles/PMC9500879/ /pubmed/36144936 http://dx.doi.org/10.3390/nano12183148 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Huang, Yujie
Yang, Jing
Zhao, Degang
Zhang, Yuheng
Liu, Zongshun
Liang, Feng
Chen, Ping
Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors
title Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors
title_full Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors
title_fullStr Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors
title_full_unstemmed Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors
title_short Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors
title_sort role of vacancy defects in reducing the responsivity of algan schottky barrier ultraviolet detectors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9500879/
https://www.ncbi.nlm.nih.gov/pubmed/36144936
http://dx.doi.org/10.3390/nano12183148
work_keys_str_mv AT huangyujie roleofvacancydefectsinreducingtheresponsivityofalganschottkybarrierultravioletdetectors
AT yangjing roleofvacancydefectsinreducingtheresponsivityofalganschottkybarrierultravioletdetectors
AT zhaodegang roleofvacancydefectsinreducingtheresponsivityofalganschottkybarrierultravioletdetectors
AT zhangyuheng roleofvacancydefectsinreducingtheresponsivityofalganschottkybarrierultravioletdetectors
AT liuzongshun roleofvacancydefectsinreducingtheresponsivityofalganschottkybarrierultravioletdetectors
AT liangfeng roleofvacancydefectsinreducingtheresponsivityofalganschottkybarrierultravioletdetectors
AT chenping roleofvacancydefectsinreducingtheresponsivityofalganschottkybarrierultravioletdetectors