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Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors
The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN. It was found that neither dislocation density nor the concentration of carbon and ox...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9500879/ https://www.ncbi.nlm.nih.gov/pubmed/36144936 http://dx.doi.org/10.3390/nano12183148 |
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author | Huang, Yujie Yang, Jing Zhao, Degang Zhang, Yuheng Liu, Zongshun Liang, Feng Chen, Ping |
author_facet | Huang, Yujie Yang, Jing Zhao, Degang Zhang, Yuheng Liu, Zongshun Liang, Feng Chen, Ping |
author_sort | Huang, Yujie |
collection | PubMed |
description | The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN. It was found that neither dislocation density nor the concentration of carbon and oxygen impurities made any remarkable difference in these AlGaN devices. However, the positron annihilation experiments showed that the concentration of Al or Ga vacancy defects (more likely Ga vacancy defects) in AlGaN active layers increased with the increase in Al content. It is assumed that the Al or Ga vacancy defects play a negative role in a detector’s performance, which increases the recombination of photogenerated carriers and reduces the detector responsivity. It is necessary to control the concentration of vacancy defects for the high performance AlGaN detectors. |
format | Online Article Text |
id | pubmed-9500879 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-95008792022-09-24 Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors Huang, Yujie Yang, Jing Zhao, Degang Zhang, Yuheng Liu, Zongshun Liang, Feng Chen, Ping Nanomaterials (Basel) Article The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN. It was found that neither dislocation density nor the concentration of carbon and oxygen impurities made any remarkable difference in these AlGaN devices. However, the positron annihilation experiments showed that the concentration of Al or Ga vacancy defects (more likely Ga vacancy defects) in AlGaN active layers increased with the increase in Al content. It is assumed that the Al or Ga vacancy defects play a negative role in a detector’s performance, which increases the recombination of photogenerated carriers and reduces the detector responsivity. It is necessary to control the concentration of vacancy defects for the high performance AlGaN detectors. MDPI 2022-09-11 /pmc/articles/PMC9500879/ /pubmed/36144936 http://dx.doi.org/10.3390/nano12183148 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Huang, Yujie Yang, Jing Zhao, Degang Zhang, Yuheng Liu, Zongshun Liang, Feng Chen, Ping Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors |
title | Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors |
title_full | Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors |
title_fullStr | Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors |
title_full_unstemmed | Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors |
title_short | Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors |
title_sort | role of vacancy defects in reducing the responsivity of algan schottky barrier ultraviolet detectors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9500879/ https://www.ncbi.nlm.nih.gov/pubmed/36144936 http://dx.doi.org/10.3390/nano12183148 |
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