3D Simulation, Electrical Characteristics and Customized Manufacturing Method for a Hemispherical Electrode Detector

The theoretical basis of a hypothetical spherical electrode detector was investigated in our previous work. It was found that the proposed detector has very good electrical characteristics, such as greatly reduced full depletion voltage, small capacitance and ultra-fast collection time. However, due to the limitations of current technology, spherical electrode detectors cannot be made. Therefore, in order to use existing CMOS technology to realize the fabrication of the detector, a hemispherical electrode detector is proposed. In this work, 3D modeling and simulation including potential and electric field distribution and hole concentration distribution are carried out using the TCAD simulation tools. In addition, the electrical characteristics, such as I-V, C-V, induced current and charge collection efficiency (CCE) with different radiation fluences, are studied to predict the radiation hardness property of the device. Furthermore, a customized manufacturing method is proposed and simulated with the TCAD-SPROCESS simulation tool. The key is to reasonably set the aspect ratio of the deep trench in the multi-step repetitive process and optimize parameters such as the angle, energy, and dose of ion implantation to realize the connection of the heavily doped region of the near-hemispherical electrode. Finally, the electrical characteristics of the process simulation are compared with the device simulation results to verify its feasibility.