High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO(2) Thin Film with Non-Identical Pulse Waveforms

We enhanced the device uniformity for reliable memory performances by increasing the device surface roughness by exposing the HfO(2) thin film surface to argon (Ar) plasma. The results showed significant improvements in electrical and synaptic properties, including memory window, linearity, pattern...

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Ke-Jing, Weng, Yu-Chuan, Wang, Li-Wen, Lin, Hsin-Ni, Pal, Parthasarathi, Chu, Sheng-Yuan, Lu, Darsen, Wang, Yeong-Her
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9501455/
https://www.ncbi.nlm.nih.gov/pubmed/36145040
http://dx.doi.org/10.3390/nano12183252

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9501455/
https://www.ncbi.nlm.nih.gov/pubmed/36145040
http://dx.doi.org/10.3390/nano12183252

Ejemplares similares