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Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells

The cathode buffer layer (CBL) plays a crucial role in organic solar cells (OSCs), and it has been challenging to obtain high-quality CBL by using simple and reliable processes. In this paper, the bilayer structure consisting of ZnO nanoparticles (NPs) and sol–gel SnO(2) was prepared by the low-temp...

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Autores principales: Zou, Zhijun, Li, Fen, Fang, Jing, Chen, Mingxin, Sun, Xiaoxiang, Li, Chang, Tao, Jiayou, Liao, Gaohua, Zhang, Jianjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9501581/
https://www.ncbi.nlm.nih.gov/pubmed/36144937
http://dx.doi.org/10.3390/nano12183149
_version_ 1784795510154985472
author Zou, Zhijun
Li, Fen
Fang, Jing
Chen, Mingxin
Sun, Xiaoxiang
Li, Chang
Tao, Jiayou
Liao, Gaohua
Zhang, Jianjun
author_facet Zou, Zhijun
Li, Fen
Fang, Jing
Chen, Mingxin
Sun, Xiaoxiang
Li, Chang
Tao, Jiayou
Liao, Gaohua
Zhang, Jianjun
author_sort Zou, Zhijun
collection PubMed
description The cathode buffer layer (CBL) plays a crucial role in organic solar cells (OSCs), and it has been challenging to obtain high-quality CBL by using simple and reliable processes. In this paper, the bilayer structure consisting of ZnO nanoparticles (NPs) and sol–gel SnO(2) was prepared by the low-temperature (<100 °C) UV-ozone (UVO) sintering process and used as the robust CBL for ternary OSCs based on PTB7-Th:PCDTBT:PC(70)BM. The results show that the insertion of SnO(2) can effectively fill the cracks and pores on the surface of the ZnO NP film, thereby improving the overall compactness and flatness of the CBL and reducing the defect density inside the CBL. Furthermore, the insertion of SnO(2) slightly improves the transmittance of the CBL to photons with wavelengths in the range of 400–600 nm, and also increases the electron mobility of the CBL thus facilitating the extraction and transport of the electrons. Compared to the devices using UVO-ZnO and UVO-SnO(2) CBLs, the devices with UVO-ZnO/SnO(2) CBL exhibit exceptional performance advantages, the best power conversion efficiency (PCE) reaches 10.56%. More importantly, the stability of the devices with ZnO/SnO(2) CBL is significantly improved, the device (PCE) still maintains 60% of the initial value after 30 days in air. The positive results show that the UVO-ZnO/SnO(2) is an ideal CBL for OSCs, and due to the low-temperature process, it has great application potential in flexible OSCs.
format Online
Article
Text
id pubmed-9501581
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-95015812022-09-24 Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells Zou, Zhijun Li, Fen Fang, Jing Chen, Mingxin Sun, Xiaoxiang Li, Chang Tao, Jiayou Liao, Gaohua Zhang, Jianjun Nanomaterials (Basel) Article The cathode buffer layer (CBL) plays a crucial role in organic solar cells (OSCs), and it has been challenging to obtain high-quality CBL by using simple and reliable processes. In this paper, the bilayer structure consisting of ZnO nanoparticles (NPs) and sol–gel SnO(2) was prepared by the low-temperature (<100 °C) UV-ozone (UVO) sintering process and used as the robust CBL for ternary OSCs based on PTB7-Th:PCDTBT:PC(70)BM. The results show that the insertion of SnO(2) can effectively fill the cracks and pores on the surface of the ZnO NP film, thereby improving the overall compactness and flatness of the CBL and reducing the defect density inside the CBL. Furthermore, the insertion of SnO(2) slightly improves the transmittance of the CBL to photons with wavelengths in the range of 400–600 nm, and also increases the electron mobility of the CBL thus facilitating the extraction and transport of the electrons. Compared to the devices using UVO-ZnO and UVO-SnO(2) CBLs, the devices with UVO-ZnO/SnO(2) CBL exhibit exceptional performance advantages, the best power conversion efficiency (PCE) reaches 10.56%. More importantly, the stability of the devices with ZnO/SnO(2) CBL is significantly improved, the device (PCE) still maintains 60% of the initial value after 30 days in air. The positive results show that the UVO-ZnO/SnO(2) is an ideal CBL for OSCs, and due to the low-temperature process, it has great application potential in flexible OSCs. MDPI 2022-09-11 /pmc/articles/PMC9501581/ /pubmed/36144937 http://dx.doi.org/10.3390/nano12183149 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zou, Zhijun
Li, Fen
Fang, Jing
Chen, Mingxin
Sun, Xiaoxiang
Li, Chang
Tao, Jiayou
Liao, Gaohua
Zhang, Jianjun
Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells
title Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells
title_full Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells
title_fullStr Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells
title_full_unstemmed Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells
title_short Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells
title_sort low-temperature uvo-sintered zno/sno(2) as robust cathode buffer layer for ternary organic solar cells
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9501581/
https://www.ncbi.nlm.nih.gov/pubmed/36144937
http://dx.doi.org/10.3390/nano12183149
work_keys_str_mv AT zouzhijun lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells
AT lifen lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells
AT fangjing lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells
AT chenmingxin lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells
AT sunxiaoxiang lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells
AT lichang lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells
AT taojiayou lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells
AT liaogaohua lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells
AT zhangjianjun lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells