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Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells
The cathode buffer layer (CBL) plays a crucial role in organic solar cells (OSCs), and it has been challenging to obtain high-quality CBL by using simple and reliable processes. In this paper, the bilayer structure consisting of ZnO nanoparticles (NPs) and sol–gel SnO(2) was prepared by the low-temp...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9501581/ https://www.ncbi.nlm.nih.gov/pubmed/36144937 http://dx.doi.org/10.3390/nano12183149 |
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author | Zou, Zhijun Li, Fen Fang, Jing Chen, Mingxin Sun, Xiaoxiang Li, Chang Tao, Jiayou Liao, Gaohua Zhang, Jianjun |
author_facet | Zou, Zhijun Li, Fen Fang, Jing Chen, Mingxin Sun, Xiaoxiang Li, Chang Tao, Jiayou Liao, Gaohua Zhang, Jianjun |
author_sort | Zou, Zhijun |
collection | PubMed |
description | The cathode buffer layer (CBL) plays a crucial role in organic solar cells (OSCs), and it has been challenging to obtain high-quality CBL by using simple and reliable processes. In this paper, the bilayer structure consisting of ZnO nanoparticles (NPs) and sol–gel SnO(2) was prepared by the low-temperature (<100 °C) UV-ozone (UVO) sintering process and used as the robust CBL for ternary OSCs based on PTB7-Th:PCDTBT:PC(70)BM. The results show that the insertion of SnO(2) can effectively fill the cracks and pores on the surface of the ZnO NP film, thereby improving the overall compactness and flatness of the CBL and reducing the defect density inside the CBL. Furthermore, the insertion of SnO(2) slightly improves the transmittance of the CBL to photons with wavelengths in the range of 400–600 nm, and also increases the electron mobility of the CBL thus facilitating the extraction and transport of the electrons. Compared to the devices using UVO-ZnO and UVO-SnO(2) CBLs, the devices with UVO-ZnO/SnO(2) CBL exhibit exceptional performance advantages, the best power conversion efficiency (PCE) reaches 10.56%. More importantly, the stability of the devices with ZnO/SnO(2) CBL is significantly improved, the device (PCE) still maintains 60% of the initial value after 30 days in air. The positive results show that the UVO-ZnO/SnO(2) is an ideal CBL for OSCs, and due to the low-temperature process, it has great application potential in flexible OSCs. |
format | Online Article Text |
id | pubmed-9501581 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-95015812022-09-24 Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells Zou, Zhijun Li, Fen Fang, Jing Chen, Mingxin Sun, Xiaoxiang Li, Chang Tao, Jiayou Liao, Gaohua Zhang, Jianjun Nanomaterials (Basel) Article The cathode buffer layer (CBL) plays a crucial role in organic solar cells (OSCs), and it has been challenging to obtain high-quality CBL by using simple and reliable processes. In this paper, the bilayer structure consisting of ZnO nanoparticles (NPs) and sol–gel SnO(2) was prepared by the low-temperature (<100 °C) UV-ozone (UVO) sintering process and used as the robust CBL for ternary OSCs based on PTB7-Th:PCDTBT:PC(70)BM. The results show that the insertion of SnO(2) can effectively fill the cracks and pores on the surface of the ZnO NP film, thereby improving the overall compactness and flatness of the CBL and reducing the defect density inside the CBL. Furthermore, the insertion of SnO(2) slightly improves the transmittance of the CBL to photons with wavelengths in the range of 400–600 nm, and also increases the electron mobility of the CBL thus facilitating the extraction and transport of the electrons. Compared to the devices using UVO-ZnO and UVO-SnO(2) CBLs, the devices with UVO-ZnO/SnO(2) CBL exhibit exceptional performance advantages, the best power conversion efficiency (PCE) reaches 10.56%. More importantly, the stability of the devices with ZnO/SnO(2) CBL is significantly improved, the device (PCE) still maintains 60% of the initial value after 30 days in air. The positive results show that the UVO-ZnO/SnO(2) is an ideal CBL for OSCs, and due to the low-temperature process, it has great application potential in flexible OSCs. MDPI 2022-09-11 /pmc/articles/PMC9501581/ /pubmed/36144937 http://dx.doi.org/10.3390/nano12183149 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Zou, Zhijun Li, Fen Fang, Jing Chen, Mingxin Sun, Xiaoxiang Li, Chang Tao, Jiayou Liao, Gaohua Zhang, Jianjun Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells |
title | Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells |
title_full | Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells |
title_fullStr | Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells |
title_full_unstemmed | Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells |
title_short | Low-Temperature UVO-Sintered ZnO/SnO(2) as Robust Cathode Buffer Layer for Ternary Organic Solar Cells |
title_sort | low-temperature uvo-sintered zno/sno(2) as robust cathode buffer layer for ternary organic solar cells |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9501581/ https://www.ncbi.nlm.nih.gov/pubmed/36144937 http://dx.doi.org/10.3390/nano12183149 |
work_keys_str_mv | AT zouzhijun lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells AT lifen lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells AT fangjing lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells AT chenmingxin lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells AT sunxiaoxiang lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells AT lichang lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells AT taojiayou lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells AT liaogaohua lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells AT zhangjianjun lowtemperatureuvosinteredznosno2asrobustcathodebufferlayerforternaryorganicsolarcells |