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The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector

The Silicon Drift Detector (SDD) with square structure is often used in pixel-type SDD arrays to reduce the dead region considerably and to improve the detector performance significantly. Usually, the anode is located in the center of the active region of the SDD with square structure (square-SDD),...

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Autores principales: Luo, Wei, Wang, Longjie, Jia, Rui, Tao, Ke, Wang, Bolong, Ouyang, Xiaoping, Li, Xing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9501857/
https://www.ncbi.nlm.nih.gov/pubmed/36144119
http://dx.doi.org/10.3390/mi13091496
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author Luo, Wei
Wang, Longjie
Jia, Rui
Tao, Ke
Wang, Bolong
Ouyang, Xiaoping
Li, Xing
author_facet Luo, Wei
Wang, Longjie
Jia, Rui
Tao, Ke
Wang, Bolong
Ouyang, Xiaoping
Li, Xing
author_sort Luo, Wei
collection PubMed
description The Silicon Drift Detector (SDD) with square structure is often used in pixel-type SDD arrays to reduce the dead region considerably and to improve the detector performance significantly. Usually, the anode is located in the center of the active region of the SDD with square structure (square-SDD), but the different anode positions in the square-SDD active area are also allowed. In order to explore the effect on device performance when the anode is located at different positions in the square-SDD active region, we designed two different types of square-SDD in this work, where the anode is located either in the center (SDD-1) or at the edge (SDD-2) of its active region. The simulation results of current density and potential distribution show that SDD-1 and SDD-2 have both formed a good electron drift path to make the anode collect electrons. The experimental results of device performance at the temperature range from −60 °C to 60 °C show that the anode current of the two fabricated SDDs both decreased with the decrease of temperature, but their voltage divider characteristics exhibited high stability resistance value and low temperature coefficient, thereby indicating that they could both provide corresponding continuous and uniform electric field at different temperatures. Finally, SDD-1 and SDD-2 have energy resolutions of 248 and 257 eV corresponding to the 5.9 keV photon peak of the Fe-55 radioactive source, respectively. Our experimental results demonstrate that there is no significant impact on the device performance irrespective of the anode positions in the square-SDD devices.
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spelling pubmed-95018572022-09-24 The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector Luo, Wei Wang, Longjie Jia, Rui Tao, Ke Wang, Bolong Ouyang, Xiaoping Li, Xing Micromachines (Basel) Article The Silicon Drift Detector (SDD) with square structure is often used in pixel-type SDD arrays to reduce the dead region considerably and to improve the detector performance significantly. Usually, the anode is located in the center of the active region of the SDD with square structure (square-SDD), but the different anode positions in the square-SDD active area are also allowed. In order to explore the effect on device performance when the anode is located at different positions in the square-SDD active region, we designed two different types of square-SDD in this work, where the anode is located either in the center (SDD-1) or at the edge (SDD-2) of its active region. The simulation results of current density and potential distribution show that SDD-1 and SDD-2 have both formed a good electron drift path to make the anode collect electrons. The experimental results of device performance at the temperature range from −60 °C to 60 °C show that the anode current of the two fabricated SDDs both decreased with the decrease of temperature, but their voltage divider characteristics exhibited high stability resistance value and low temperature coefficient, thereby indicating that they could both provide corresponding continuous and uniform electric field at different temperatures. Finally, SDD-1 and SDD-2 have energy resolutions of 248 and 257 eV corresponding to the 5.9 keV photon peak of the Fe-55 radioactive source, respectively. Our experimental results demonstrate that there is no significant impact on the device performance irrespective of the anode positions in the square-SDD devices. MDPI 2022-09-08 /pmc/articles/PMC9501857/ /pubmed/36144119 http://dx.doi.org/10.3390/mi13091496 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Luo, Wei
Wang, Longjie
Jia, Rui
Tao, Ke
Wang, Bolong
Ouyang, Xiaoping
Li, Xing
The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector
title The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector
title_full The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector
title_fullStr The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector
title_full_unstemmed The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector
title_short The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector
title_sort effects of different anode positions on the electrical properties of square-silicon drift detector
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9501857/
https://www.ncbi.nlm.nih.gov/pubmed/36144119
http://dx.doi.org/10.3390/mi13091496
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