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Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg(2)Si/Si Heterojunction

In this investigation, p–Mg(2)Si/n–Si heterojunction photodetector (PD) is fabricated by magnetron sputtering and low vacuum annealing in the absence of argon or nitrogen atmosphere. Multilayer Graphene (MLG)/Mg(2)Si/Si heterojunction PD is first fabricated by transferring MLG to Mg(2)Si/Si heteroju...

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Autores principales: Yu, Hong, Deng, Rui, Mo, Zhangjie, Ji, Shentong, Xie, Quan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9503023/
https://www.ncbi.nlm.nih.gov/pubmed/36145018
http://dx.doi.org/10.3390/nano12183230
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author Yu, Hong
Deng, Rui
Mo, Zhangjie
Ji, Shentong
Xie, Quan
author_facet Yu, Hong
Deng, Rui
Mo, Zhangjie
Ji, Shentong
Xie, Quan
author_sort Yu, Hong
collection PubMed
description In this investigation, p–Mg(2)Si/n–Si heterojunction photodetector (PD) is fabricated by magnetron sputtering and low vacuum annealing in the absence of argon or nitrogen atmosphere. Multilayer Graphene (MLG)/Mg(2)Si/Si heterojunction PD is first fabricated by transferring MLG to Mg(2)Si/Si heterojunction substrate using the suspended self-help transfer MLG method. After characterizing the phase composition, morphology and detection properties of Mg(2)Si/Si and MLG/Mg(2)Si/Si heterojunction PDs, the successful fabrication of the Mg(2)Si/Si and MLG/Mg(2)Si/Si heterojunction PDs are confirmed and some detection capabilities are realized. Compared with the Mg(2)Si/Si heterojunction PD, the light absorption and the ability to effectively separate and transfer photogenerated carriers of MLG/Mg(2)Si/Si heterojunction PD are improved. The responsivity, external quantum efficiency (EQE), noise equivalent power (NEP), detectivity (D*), on/off ratio and other detection properties are enhanced. The peak responsivity and EQE of the MLG/Mg(2)Si/Si heterojunction PD are 23.7 mA/W and 2.75%, respectively, which are better than the previous 1–10 mA/W and 2.3%. The results illustrate that the fabrication technology of introducing MLG to regulate the detection properties of the Mg(2)Si/Si heterojunction PD is feasible. In addition, this study reveals the potential of MLG to enhance the detection properties of optoelectronic devices, broadens the application prospect of the Mg(2)Si/Si-based heterojunction PDs and provides a direction for the regulation of optoelectronic devices.
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spelling pubmed-95030232022-09-24 Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg(2)Si/Si Heterojunction Yu, Hong Deng, Rui Mo, Zhangjie Ji, Shentong Xie, Quan Nanomaterials (Basel) Article In this investigation, p–Mg(2)Si/n–Si heterojunction photodetector (PD) is fabricated by magnetron sputtering and low vacuum annealing in the absence of argon or nitrogen atmosphere. Multilayer Graphene (MLG)/Mg(2)Si/Si heterojunction PD is first fabricated by transferring MLG to Mg(2)Si/Si heterojunction substrate using the suspended self-help transfer MLG method. After characterizing the phase composition, morphology and detection properties of Mg(2)Si/Si and MLG/Mg(2)Si/Si heterojunction PDs, the successful fabrication of the Mg(2)Si/Si and MLG/Mg(2)Si/Si heterojunction PDs are confirmed and some detection capabilities are realized. Compared with the Mg(2)Si/Si heterojunction PD, the light absorption and the ability to effectively separate and transfer photogenerated carriers of MLG/Mg(2)Si/Si heterojunction PD are improved. The responsivity, external quantum efficiency (EQE), noise equivalent power (NEP), detectivity (D*), on/off ratio and other detection properties are enhanced. The peak responsivity and EQE of the MLG/Mg(2)Si/Si heterojunction PD are 23.7 mA/W and 2.75%, respectively, which are better than the previous 1–10 mA/W and 2.3%. The results illustrate that the fabrication technology of introducing MLG to regulate the detection properties of the Mg(2)Si/Si heterojunction PD is feasible. In addition, this study reveals the potential of MLG to enhance the detection properties of optoelectronic devices, broadens the application prospect of the Mg(2)Si/Si-based heterojunction PDs and provides a direction for the regulation of optoelectronic devices. MDPI 2022-09-17 /pmc/articles/PMC9503023/ /pubmed/36145018 http://dx.doi.org/10.3390/nano12183230 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Yu, Hong
Deng, Rui
Mo, Zhangjie
Ji, Shentong
Xie, Quan
Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg(2)Si/Si Heterojunction
title Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg(2)Si/Si Heterojunction
title_full Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg(2)Si/Si Heterojunction
title_fullStr Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg(2)Si/Si Heterojunction
title_full_unstemmed Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg(2)Si/Si Heterojunction
title_short Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg(2)Si/Si Heterojunction
title_sort fabrication and characterization of visible to near-infrared photodetector based on multilayer graphene/mg(2)si/si heterojunction
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9503023/
https://www.ncbi.nlm.nih.gov/pubmed/36145018
http://dx.doi.org/10.3390/nano12183230
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