Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM

As the physical dimensions of cell transistors in dynamic random-access memory (DRAM) have been aggressively scaled down, buried-channel-array transistors (BCATs) have been adopted in industry to suppress short channel effects and to achieve a better performance. In very aggressively scaled-down BCA...

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Detalles Bibliográficos
Autores principales: Sun, Minjae, Baac, Hyoung Won, Shin, Changhwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505224/
https://www.ncbi.nlm.nih.gov/pubmed/36144099
http://dx.doi.org/10.3390/mi13091476

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505224/
https://www.ncbi.nlm.nih.gov/pubmed/36144099
http://dx.doi.org/10.3390/mi13091476

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