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Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM
As the physical dimensions of cell transistors in dynamic random-access memory (DRAM) have been aggressively scaled down, buried-channel-array transistors (BCATs) have been adopted in industry to suppress short channel effects and to achieve a better performance. In very aggressively scaled-down BCA...
Autores principales: | Sun, Minjae, Baac, Hyoung Won, Shin, Changhwan |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505224/ https://www.ncbi.nlm.nih.gov/pubmed/36144099 http://dx.doi.org/10.3390/mi13091476 |
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