Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate, enabling a positive threshold voltage higher than...

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Detalles Bibliográficos
Autores principales: Abid, Idriss, Hamdaoui, Youssef, Mehta, Jash, Derluyn, Joff, Medjdoub, Farid
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505277/
https://www.ncbi.nlm.nih.gov/pubmed/36144142
http://dx.doi.org/10.3390/mi13091519

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505277/
https://www.ncbi.nlm.nih.gov/pubmed/36144142
http://dx.doi.org/10.3390/mi13091519

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